IRF9530NL
MOSFET P-CH 100V 14A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET IRF9530NL offers a 100V drain-source voltage with continuous drain current capability of 14A at 25°C (Tc). This device features a low on-resistance of 200mOhm maximum at 8.4A and 10V Vgs. The gate charge (Qg) is specified at 58 nC maximum at 10V, and input capacitance (Ciss) is 760 pF maximum at 25V. With a maximum power dissipation of 79W at 25°C (Tc) and 3.8W at 25°C (Ta), the IRF9530NL is packaged in a TO-262-3 Long Leads, I2PAK, TO-262AA configuration for through-hole mounting. The operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in power management and motor control applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 79W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 25 V |
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