IRF9520NSTRR
MOSFET P-CH 100V 6.8A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF9520NSTRR is a P-channel Power MOSFET in a D2PAK surface mount package. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 6.8A at 25°C (Tc). The Rds On is specified at a maximum of 480mOhm at 4A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 27 nC (Max) at 10V and an Input Capacitance (Ciss) of 350 pF (Max) at 25V. Power dissipation is rated at 3.8W (Ta) and 48W (Tc). Operating temperature range is -55°C to 175°C (TJ). This device is commonly employed in power management and switching applications across various industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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