IRF9520NSPBF
MOSFET P-CH 100V 6.8A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF9520NSPBF is a P-channel MOSFET designed for power management applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 6.8A at 25°C (Tc). The Rds On is specified at a maximum of 480mOhm at 4A and 10V gate drive. With a Gate Charge (Qg) of 27 nC at 10V and an input capacitance (Ciss) of 350 pF at 25V, it offers efficient switching characteristics. The IRF9520NSPBF is housed in a TO-263-3, D2PAK package, suitable for surface mounting. This component is utilized in industries such as automotive and industrial automation. Power dissipation is rated at 3.8W (Ta) and 48W (Tc). Operating temperature ranges from -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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