IRF9520NS
MOSFET P-CH 100V 6.8A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF9520NS is a P-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 6.8A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 480mOhm maximum at 4A and 10V Vgs, with a gate drive voltage range up to 10V. With a maximum power dissipation of 48W (Tc), it is suitable for demanding power management tasks. Key electrical characteristics include a gate charge (Qg) of 27nC maximum at 10V and an input capacitance (Ciss) of 350pF maximum at 25V. The IRF9520NS is packaged in a surface-mount TO-263-3, D2PAK package, operating across a temperature range of -55°C to 175°C. This MOSFET is commonly utilized in industrial power supplies, motor control, and automotive electronics.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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