IRF9520NPBF
MOSFET P-CH 100V 6.8A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRF9520NPBF is a P-Channel HEXFET® power MOSFET designed for efficient power switching applications. This component features a maximum drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 6.8 A at 25°C. The ON-resistance (Rds On) is 480 mOhm maximum at 4 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 27 nC maximum at 10 V and an input capacitance (Ciss) of 350 pF maximum at 25 V. The device is housed in a TO-220AB package with through-hole mounting. This MOSFET is suitable for use in industrial and automotive power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 4A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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