IRF9520NLPBF
MOSFET P-CH 100V 6.8A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF9520NLPBF is a P-Channel Power MOSFET designed for demanding applications. This component features a 100 V drain-source voltage (Vdss) and a continuous drain current (Id) of 6.8 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 480 mOhm at 4 A and 10 V, it offers efficient power switching. The device supports a gate drive voltage of 10 V for optimal performance and has a maximum gate-source voltage (Vgs) of ±20V. Key parameters include a gate charge (Qg) of 27 nC at 10 V and input capacitance (Ciss) of 350 pF at 25 V. Power dissipation is rated at 3.8 W (Ta) and 48 W (Tc). The IRF9520NLPBF is housed in a TO-262-3 Long Leads, I2PAK, TO-262AA package, suitable for through-hole mounting. This MOSFET is utilized across various industries including automotive, industrial automation, and power supply designs.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |