IRF9520NL
MOSFET P-CH 100V 6.8A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF9520NL is a P-channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 6.8A at 25°C (Tc). With a maximum on-resistance (Rds On) of 480mOhm at 4A and 10V gate drive, it offers low conduction losses. The device has a typical gate charge (Qg) of 27nC at 10V and input capacitance (Ciss) of 350pF at 25V. The IRF9520NL is packaged in a TO-262-3 Long Leads package for through-hole mounting. It operates within a temperature range of -55°C to 175°C (TJ) and supports a maximum gate-source voltage of ±20V. Power dissipation is rated at 3.8W (Ta) and 48W (Tc). This MOSFET is suitable for use in various industrial sectors, including power supplies and motor control.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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