IRF9410
MOSFET N-CH 30V 7A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies HEXFET® IRF9410 is an N-Channel Power MOSFET with a 30V drain-source voltage rating. Designed for efficient switching, this component features a continuous drain current of 7A (Ta) at 25°C and a maximum power dissipation of 2.5W (Ta). The Rds On is specified at a maximum of 30mOhm at 7A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 27nC (Max) at 10V and input capacitance (Ciss) of 550pF (Max) at 25V. This surface mount device is housed in an 8-SOIC package, suitable for applications requiring robust performance. It operates across a wide temperature range of -55°C to 150°C. The IRF9410 is utilized in various industrial and consumer electronics applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
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