IRF9393PBF
MOSFET P-CH 30V 9.2A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF9393PBF is a P-channel power MOSFET designed for efficient power management applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) capability of 9.2A at 25°C. The device exhibits a low On-Resistance (Rds(on)) of 13.3mOhm maximum at 9.2A and 20V Vgs, with a typical Gate Charge (Qg) of 38 nC at 10V. It is packaged in a surface-mount 8-SOIC (0.154", 3.90mm Width) for automated assembly and offers a maximum power dissipation of 2.5W. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for use in automotive and industrial power control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 13.3mOhm @ 9.2A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 20V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 25 V |