IRF9392TRPBF
MOSFET P-CH 30V 9.8A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel Power MOSFET, part number IRF9392TRPBF, offers a 30V drain-source voltage and 9.8A continuous drain current. This surface mount device, packaged in an 8-SOIC (0.154", 3.90mm Width), features a low on-resistance of 12.1mOhm at 7.8A and 20V. With a maximum power dissipation of 2.5W (Ta), it operates within a temperature range of -55°C to 150°C. The gate charge is rated at 14 nC maximum at 4.5V, and input capacitance is 1270 pF maximum at 25V. This component is suitable for applications in automotive, industrial, and power management sectors. The device supports drive voltages from 10V to 20V, with a maximum gate-source voltage of ±25V.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 12.1mOhm @ 7.8A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 20V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1270 pF @ 25 V |
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