IRF9392PBF
MOSFET P-CH 30V 9.8A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF9392PBF, offers a 30V drain-source breakdown voltage and a continuous drain current of 9.8A at 25°C. This surface mount device features a low on-resistance of 12.1mOhm maximum at 7.8A and 20V gate drive. With a gate charge of 14nC maximum at 4.5V and an input capacitance of 1270pF maximum at 25V, it is suitable for demanding applications. The 8-SOIC package facilitates efficient thermal management with a maximum power dissipation of 2.5W. Operating across a temperature range of -55°C to 150°C, this P-channel MOSFET finds utility in automotive, industrial, and power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 12.1mOhm @ 7.8A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 20V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1270 pF @ 25 V |
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