IRF9388PBF
MOSFET P-CH 30V 12A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel Power MOSFET, IRF9388PBF. This device features a 30V drain-to-source voltage and 12A continuous drain current at 25°C ambient. The IRF9388PBF offers a low on-resistance of 8.5mOhm maximum at 12A and 20V Vgs. With a gate charge of 52 nC (max) at 10V Vgs and input capacitance of 1680 pF (max) at 25V Vds, it is suitable for efficient switching applications. The device is available in an 8-SOIC package with a maximum power dissipation of 2.5W. Operating temperature range is -55°C to 150°C. This component is utilized in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 12A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 20V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 25 V |