IRF9383MTR1PBF
MOSFET P-CH 30V 22A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF9383MTR1PBF is a P-channel MOSFET designed for demanding applications. This component offers a 30V drain-source breakdown voltage and a continuous drain current capability of 22A at 25°C ambient and 160A at 25°C case temperature. The low on-resistance of 2.9mOhm at 22A and 10V gate-source drive, combined with a maximum gate charge of 130 nC, ensures efficient power switching. Featuring a DIRECTFET™ Isometric MX surface mount package, it provides excellent thermal performance with a maximum power dissipation of 113W at 25°C case temperature. Operating across a temperature range of -40°C to 150°C, this MOSFET is suitable for automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 113W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 150µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7305 pF @ 15 V |
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