IRF9335PBF
MOSFET P-CH 30V 5.4A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IRF9335PBF is a P-channel HEXFET® power MOSFET designed for efficient switching applications. This surface mount device features a 30V drain-source breakdown voltage and a continuous drain current of 5.4A at 25°C ambient. The P-channel configuration, coupled with a maximum on-resistance of 59mOhm at 5.4A and 10V gate-source voltage, ensures low conduction losses. With a gate charge (Qg) of 14 nC at 10V and input capacitance (Ciss) of 386 pF at 25V, it offers good switching characteristics. The device supports a wide gate drive voltage range from 4.5V to 10V and has a maximum gate-source voltage of ±20V. Its 8-SOIC package (0.154" width) allows for a maximum power dissipation of 2.5W at 25°C ambient. Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for use in power management and power conversion circuits across various industrial and consumer electronics applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 5.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 10µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 386 pF @ 25 V |