IRF9333PBF
MOSFET P-CH 30V 9.2A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRF9333PBF from the HEXFET® series is a P-Channel Power MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) rating of 9.2A at 25°C, with a maximum power dissipation of 2.5W. The low on-resistance of 19.4mOhm at 9.2A and 10V gate drive voltage, coupled with a gate charge of 38nC, ensures optimal switching performance. With an input capacitance (Ciss) of 1110pF at 25V, it is suitable for various power management circuits. The component is housed in an 8-SOIC (0.154", 3.90mm Width) surface mount package, operating across a temperature range of -55°C to 150°C. This MOSFET finds application in sectors such as automotive, industrial, and consumer electronics.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 19.4mOhm @ 9.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 25 V |