IRF9332TRPBF
MOSFET P-CH 30V 9.8A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' HEXFET® series P-Channel MOSFET, part number IRF9332TRPBF, is designed for efficient power switching applications. This device features a 30V drain-source breakdown voltage and supports a continuous drain current of 9.8A at 25°C, with a maximum power dissipation of 2.5W. The Rds(On) is specified as 17.5mOhm at 9.8A and 10V gate drive. It operates with a gate-source voltage range of ±20V, and the threshold voltage is 2.4V at 25µA. Key parameters include a maximum gate charge of 41nC at 10V and input capacitance of 1270pF at 25V. The component is housed in an 8-SOIC package and supplied on tape and reel. This MOSFET is suitable for use in industrial and automotive power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 17.5mOhm @ 9.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1270 pF @ 25 V |