IRF9332PBF
MOSFET P-CH 30V 9.8A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF9332PBF is a P-channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 9.8A at 25°C, with a maximum power dissipation of 2.5W. The Rds On is specified at 17.5mOhm maximum at 9.8A and 10V gate-source voltage. It operates with a gate-source voltage range of ±20V and requires a drive voltage between 4.5V and 10V. Key electrical parameters include a gate charge (Qg) of 41 nC maximum at 10V and an input capacitance (Ciss) of 1270 pF maximum at 25V. The device is housed in an 8-SOIC (0.154", 3.90mm width) package, suitable for surface mounting. Operating temperature range is -55°C to 150°C. This component is commonly utilized in power management solutions across various industrial and consumer electronics sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 17.5mOhm @ 9.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1270 pF @ 25 V |
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