IRF9328TRPBF
MOSFET P-CH 30V 12A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF9328TRPBF, is a surface-mount device designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 12 A at 25°C (Tc). The low on-resistance of 11.9 mOhm @ 12A, 10V, combined with a maximum Gate Charge (Qg) of 52 nC @ 10 V and Input Capacitance (Ciss) of 1680 pF @ 25 V, facilitates efficient switching. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 2.5W (Ta). The 8-SOIC package (0.154", 3.90mm Width) is supplied on tape and reel. This device is suitable for use in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.9mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 25 V |