IRF9328PBF
MOSFET P-CH 30V 12A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF9328PBF, offers a 30V drain-source breakdown voltage and a continuous drain current of 12A at 25°C. This surface mount device features a low on-resistance of 11.9mOhm at 12A and 10V Vgs, with a gate charge of 52 nC at 10V. The input capacitance (Ciss) is rated at a maximum of 1680 pF at 25V. Designed for efficient power management, this MOSFET is suitable for applications requiring robust switching performance across a temperature range of -55°C to 150°C. The 8-SOIC package ensures compatibility with standard surface mount assembly processes. This component finds application in various industrial and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.9mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 25 V |