IRF9321PBF
MOSFET P-CH 30V 15A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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This P-Channel HEXFET® power MOSFET from Infineon Technologies, part number IRF9321PBF, offers a 30V drain-to-source voltage and a continuous drain current of 15A at 25°C. Designed for surface mount applications, it features an 8-SOIC package with a maximum power dissipation of 2.5W. Key electrical characteristics include a low Rds On of 7.2mOhm at 15A and 10V, with a gate charge of 98 nC at 10V. Input capacitance (Ciss) is specified at 2590 pF at 25V. The device operates across a temperature range of -55°C to 150°C. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 50µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2590 pF @ 25 V |