IRF9310PBF
MOSFET P-CH 30V 20A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF9310PBF, is a surface-mount device in an 8-SOIC package. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C (Tc). The IRF9310PBF exhibits a maximum on-resistance (Rds On) of 4.6mOhm at 20A and 10V, with a gate-source voltage (Vgs) range of ±20V. Key electrical characteristics include an input capacitance (Ciss) of 5250pF at 15V and a gate charge (Qg) of 165nC at 10V. Power dissipation is rated at 2.5W (Ta). This MOSFET is suitable for applications requiring efficient power switching and is commonly employed in automotive and industrial power management systems. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 100µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 165 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5250 pF @ 15 V |
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