IRF9204PBF
MOSFET P-CH 40V 56A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel Power MOSFET, part number IRF9204PBF. This through-hole TO-220AB packaged device features a 40V drain-to-source voltage and a continuous drain current of 56A at 25°C (Ta). The MOSFET exhibits a maximum on-resistance of 16mOhm at 37A and 10V gate-source voltage. Key parameters include a gate charge of 224 nC at 10V and input capacitance of 7676 pF at 25V. With a maximum power dissipation of 143W (Tc), this component is suitable for applications in the automotive and industrial sectors. The operating temperature range is -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Ta) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 37A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 143W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 100µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 224 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7676 pF @ 25 V |
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