IRF8721TRPBF-1
MOSFET N-CH 30V 14A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF8721TRPBF-1 is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a 30 V drain-source breakdown voltage and a continuous drain current capability of 14 A at 25°C, with a maximum power dissipation of 2.5 W. The IRF8721TRPBF-1 exhibits a low on-resistance of 8.5 mOhm at 14 A and 10 V gate drive, and a gate charge of 12 nC at 4.5 V. It is housed in an 8-SOIC package for surface mounting and operates across a temperature range of -55°C to 150°C. Key parameters include input capacitance (Ciss) of 1040 pF at 15 V and a threshold voltage (Vgs(th)) of 2.35 V at 25 µA. This MOSFET is suitable for use in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040 pF @ 15 V |
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