IRF8721GPBF
MOSFET N-CH 30V 14A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' HEXFET® series N-channel power MOSFET, part number IRF8721GPBF, offers a 30V drain-source voltage and 14A continuous drain current. This surface-mount device features a low on-resistance of 8.5mOhm at 14A and 10V Vgs, with a gate charge of 12nC at 4.5V. The MOSFET utilizes advanced trench technology for optimized performance. Key parameters include an input capacitance (Ciss) of 1040pF at 15V and a gate threshold voltage (Vgs(th)) of 2.35V at 25µA. Maximum power dissipation is 2.5W at 25°C ambient. The 8-SOIC package is suitable for applications in automotive, industrial, and consumer electronics requiring efficient power switching. Operating temperature range is -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040 pF @ 15 V |
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