IRF8714PBF
MOSFET N-CH 30V 14A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® series N-Channel Power MOSFET, part number IRF8714PBF. This device offers a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 14A at 25°C. It features a low on-resistance (Rds On) of 8.7mOhm maximum at 14A and 10V Vgs. The gate charge (Qg) is specified at a maximum of 12 nC at 4.5V Vgs, with a threshold voltage (Vgs(th)) of 2.35V maximum at 25µA. Input capacitance (Ciss) is 1020 pF maximum at 15V Vds. Designed for surface mounting in an 8-SOIC (0.154", 3.90mm Width) package, it can dissipate up to 2.5W at 25°C. Operating temperature range is -55°C to 150°C (TJ). The IRF8714PBF is suitable for applications in automotive and industrial power management.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.7mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 15 V |
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