IRF8707GTRPBF
MOSFET N-CH 30V 11A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF8707GTRPBF, offers a 30V drain-to-source voltage and continuous drain current capability of 11A at 25°C. This device features a low on-resistance of 11.9mOhm at 11A and 10V Vgs, with a gate charge of 9.3 nC at 4.5V. The input capacitance (Ciss) is specified at a maximum of 760 pF. Designed for efficient power switching applications, this surface mount component is housed in an 8-SOIC package and supports a maximum power dissipation of 2.5W. Operating temperature range is -55°C to 150°C. The IRF8707GTRPBF is commonly utilized in automotive, industrial, and consumer electronics sectors where reliable power management is critical.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 11.9mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 15 V |
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