IRF8327STR1PBF
MOSFET N-CH 30V 14A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies MOSFET N-Channel, part number IRF8327STR1PBF, is a 30V device designed for high-efficiency power switching applications. This component features a low on-resistance of 7.3mOhm at 14A and 10V, with a gate charge of 14nC at 4.5V. The continuous drain current is rated at 14A under typical ambient conditions and up to 60A under case conditions, with a maximum power dissipation of 2.2W (ambient) and 42W (case). The DirectFET™ Isometric SQ package facilitates efficient thermal management for surface mount applications. Key parameters include a Vgs(th) of 2.4V, Ciss of 1430pF, and a maximum Vgs of ±20V. This component is suitable for use in automotive, industrial, and consumer electronics where robust power conversion is critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SQ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.3mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
| Supplier Device Package | DIRECTFET™ SQ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1430 pF @ 15 V |
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