IRF8306MTRPBF
MOSFET N-CH 30V 23A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF8306MTRPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V Drain-Source Voltage (Vdss) and a continuous drain current of 23A at 25°C ambient, scaling to 140A at 25°C case temperature. The low on-resistance of 2.5mOhm at 23A and 10V gate drive is achieved with a 10V Vgs. With a maximum gate charge of 38 nC at 4.5V, it supports fast switching frequencies. The device incorporates a Schottky diode within the MOSFET body, enhancing its performance. Housed in a surface-mount DIRECTFET™ MX package, it offers excellent thermal dissipation with 75W power handling at 25°C case temperature. This MOSFET is suitable for use in automotive, industrial, and power supply applications. The operating temperature range is -40°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 140A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 23A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 2.1W (Ta), 75W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4110 pF @ 15 V |
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