IRF8302MTRPBF
MOSFET N-CH 30V 31A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF8302MTRPBF is an N-Channel power MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current capability of 31A at 25°C ambient and 190A at 25°C case temperature. The low on-resistance of 1.8mOhm at 31A and 10V gate-source voltage (Vgs) ensures efficient power transfer. Operating with a gate drive voltage range of 4.5V to 10V, the device exhibits a maximum gate charge (Qg) of 53 nC at 4.5V and an input capacitance (Ciss) of 6030 pF at 15V. The IRF8302MTRPBF is housed in a DirectFET™ Isometric MX package for surface mounting, offering excellent thermal performance with power dissipation ratings of 2.8W (ambient) and 104W (case). This MOSFET is suitable for use in automotive and industrial power management systems. The maximum gate-source voltage is ±20V.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 190A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 150µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6030 pF @ 15 V |
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