IRF8302MTR1PBF
MOSFET N CH 30V 31A MXManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF8302MTR1PBF is an N-Channel MOSFET designed for demanding applications. This component features a drain-source voltage of 30V and a continuous drain current capability of 31A at 25°C ambient, scaling up to 190A under typical case conditions. The low on-resistance of 1.8mOhm at 31A and 10V gate-source voltage, achieved with a 4.5V to 10V drive, ensures efficient power transfer. With a maximum power dissipation of 2.8W ambient and 104W case, this MOSFET is suitable for high-power switching. The DirectFET™ Isometric MX package facilitates efficient thermal management for surface mounting. Key parameters include a gate charge of 53 nC at 4.5V and input capacitance of 6030 pF at 15V. This component is utilized in industries such as automotive and industrial power control.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 190A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 150µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6030 pF @ 15 V |
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