IRF8301MTRPBF
MOSFET N-CH 30V 34A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF8301MTRPBF, is engineered for high-performance applications. This surface mount device features a 30V drain-source breakdown voltage and a continuous drain current capability of 34A at 25°C ambient, scaling to 192A at 25°C case temperature. Its low on-resistance of 1.5mOhm at 32A and 10V gate drive voltage, combined with a maximum gate charge of 77 nC at 4.5V, ensures efficient switching. The device offers a maximum power dissipation of 2.8W (ambient) and 89W (case). This MOSFET is suitable for demanding power management solutions in industries such as automotive, industrial automation, and telecommunications. The DirectFET™ Isometric MT package provides excellent thermal performance.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MT |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Ta), 192A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 150µA |
| Supplier Device Package | DIRECTFET™ MT |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6140 pF @ 15 V |
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