IRF8113TRPBF-1
MOSFET N-CH 30V 17.2A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF8113TRPBF-1 is an N-Channel power MOSFET designed for demanding applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 17.2A at 25°C. The low on-resistance (Rds On) of 5.6mOhm at 17.2A and 10V gate-source voltage (Vgs) ensures efficient power transfer. With a gate charge (Qg) of 36 nC at 4.5V and input capacitance (Ciss) of 2910 pF at 15V, it offers optimized switching performance. The MOSFET is housed in an 8-SOIC package and supports surface mount installation, with a maximum power dissipation of 2.5W. Operating temperature range is from -55°C to 150°C (TJ). This component is suitable for use in automotive, industrial, and power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 17.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2910 pF @ 15 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
