IRF8113TRPBF
MOSFET N-CH 30V 17.2A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF8113TRPBF is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V Drain-Source breakdown voltage and a continuous drain current capability of 17.2A at 25°C ambient. The low on-resistance of 5.6mOhm at 17.2A and 10V Vgs ensures efficient power transfer. Key parameters include a gate charge of 36 nC maximum at 4.5V Vgs and input capacitance of 2910 pF maximum at 15V Vds. The IRF8113TRPBF is housed in an 8-SOIC package, facilitating surface mounting. With a maximum power dissipation of 2.5W (ambient) and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 17.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2910 pF @ 15 V |
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