IRF8113
MOSFET N-CH 30V 17.2A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF8113, an N-Channel Power MOSFET, is designed for demanding applications requiring efficient power switching. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 17.2 A at 25°C with a maximum power dissipation of 2.5 W. The low on-resistance of 5.6 mOhms at 17.2 A and 10 V gate drive, coupled with a low gate charge of 36 nC at 4.5 V, ensures superior performance and reduced switching losses. With a threshold voltage (Vgs(th)) of 2.2 V at 250 µA and a maximum gate-source voltage of ±20 V, it offers broad control flexibility. The IRF8113 is housed in an 8-SOIC package, suitable for surface mounting and operating within a temperature range of -55°C to 150°C. This MOSFET finds application in power supplies, motor control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 17.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2910 pF @ 15 V |
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