IRF8010STRRPBF
MOSFET N-CH 100V 80A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF8010STRRPBF, offers a 100V drain-source breakdown voltage and a continuous drain current of 80A at 25°C (Tc). This surface mount device, packaged in a D2PAK (TO-263-3) with tape and reel packaging, features a low on-resistance of 15mOhm maximum at 45A and 10V. The maximum power dissipation is 260W at 25°C (Tc), with a gate charge of 120 nC maximum at 10V. Key parameters include an input capacitance (Ciss) of 3830 pF maximum at 25V and a gate threshold voltage (Vgs(th)) of 4V maximum at 250µA. The operating temperature range is -55°C to 175°C (TJ). This component is widely utilized in industrial power supplies, automotive applications, and motor control systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 260W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3830 pF @ 25 V |
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