IRF7854PBF
MOSFET N-CH 80V 10A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7854PBF. This surface-mount component features a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 10A at 25°C. The device offers a low on-resistance (Rds On) of 13.4mOhm at 10A and 10V. Key parameters include a gate charge (Qg) of 41 nC at 10V and input capacitance (Ciss) of 1620 pF at 25V. The IRF7854PBF operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W. It is housed in an 8-SOIC package. This MOSFET is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 13.4mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 4.9V @ 100µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 25 V |