IRF7842PBF
MOSFET N-CH 40V 18A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7842PBF, offers a 40V drain-source breakdown voltage and 18A continuous drain current at 25°C ambient. This surface-mount device features a low on-resistance of 5mOhm maximum at 17A and 10V Vgs, facilitated by a 4.5V to 10V gate drive range. The IRF7842PBF exhibits a gate charge of 50 nC maximum at 4.5V Vgs and an input capacitance of 4500 pF maximum at 20V Vds. With a maximum power dissipation of 2.5W, it is suitable for applications operating within a -55°C to 150°C temperature range. The component is housed in an 8-SOIC package. This MOSFET is commonly utilized in power management, automotive, and industrial automation sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 20 V |
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