IRF7834TRPBF
MOSFET N-CH 30V 19A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7834TRPBF, features a 30V drain-source voltage and a continuous drain current of 19A at 25°C. This device offers a low on-resistance of 4.5mOhm at 19A and 10V Vgs. The gate charge is specified at 44 nC maximum at 4.5V Vgs, with input capacitance (Ciss) at 3710 pF maximum at 15V Vds. Designed for surface mounting in an 8-SOIC package, it operates across a temperature range of -55°C to 150°C. The maximum power dissipation is 2.5W. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3710 pF @ 15 V |
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