IRF7834TR
MOSFET N-CH 30V 19A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7834TR. This surface mount device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 19A at 25°C. The Rds(On) is specified at 4.5mOhm maximum for 19A drain current and 10V gate-source voltage. With a gate charge (Qg) of 44 nC maximum at 4.5V, this MOSFET is designed for efficient switching. Key parameters include an input capacitance (Ciss) of 3710 pF maximum at 15V and a power dissipation of 2.5W. The device operates across a temperature range of -55°C to 150°C and is supplied in an 8-SOIC package on tape and reel. This component is suitable for applications in power management and motor control.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3710 pF @ 15 V |
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