IRF7832TR
MOSFET N-CH 30V 20A 8-SOICManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRF7832TR, an N-Channel MOSFET, features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C ambient. This component utilizes Metal Oxide technology and is presented in an 8-SOIC package, designed for surface mounting. Key electrical characteristics include a low on-resistance (Rds On) of 4mOhm at 20A and 10V, a gate charge (Qg) of 51 nC maximum at 4.5V, and an input capacitance (Ciss) of 4310 pF maximum at 15V. The threshold voltage (Vgs(th)) is a maximum of 2.32V at 250µA. This device is suitable for applications in automotive and industrial power switching. The component is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 20A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.32V @ 250µA |
| Supplier Device Package | 8-SO |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4310 pF @ 15 V |
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