IRF7831TR
MOSFET N-CH 30V 21A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7831TR is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 21A at 25°C ambient. With a low on-resistance of 3.6mOhm maximum at 20A and 10V gate-source voltage, it offers efficient power switching. The device has a gate charge of 60 nC maximum at 4.5V and input capacitance of 6240 pF maximum at 15V. Packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, the IRF7831TR supports a maximum power dissipation of 2.5W at 25°C ambient. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for use in automotive, industrial, and high-power switching applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.35V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6240 pF @ 15 V |
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