IRF7831PBF
MOSFET N-CH 30V 21A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7831PBF. This component is designed for high-efficiency switching applications and features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 21A at 25°C. The Rds(on) is specified at a maximum of 3.6 mOhm at 20A and 10V gate drive. Key electrical characteristics include a gate charge (Qg) of 60 nC at 4.5V and input capacitance (Ciss) of 6240 pF at 15V. This device is housed in an 8-SOIC package and supports surface mount assembly, with a maximum power dissipation of 2.5W. Operating temperature range is -55°C to 150°C (TJ). Its robust performance makes it suitable for use in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.35V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6240 pF @ 15 V |
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