IRF7828TRPBF
MOSFET N-CH 30V 13.6A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7828TRPBF is an N-Channel power MOSFET designed for efficient switching applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 13.6A at 25°C, with a maximum power dissipation of 2.5W. The low on-resistance of 12.5mOhm is achieved at 10A and 4.5V gate-source voltage (Vgs). Key electrical parameters include a gate charge (Qg) of 14 nC maximum at 5V Vgs and an input capacitance (Ciss) of 1010 pF maximum at 15V Vds. The IRF7828TRPBF utilizes surface mount technology, packaged in an 8-SOIC (0.154" width) and supplied on tape and reel. It operates across a temperature range of -55°C to 150°C and is suitable for use in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 10A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1010 pF @ 15 V |
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