IRF7828PBF
MOSFET N-CH 30V 13.6A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7828PBF, is designed for high-efficiency power switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current rating of 13.6A at 25°C ambient. The on-resistance (Rds(on)) is specified at a maximum of 12.5mOhm at 10A and 4.5V gate-source voltage. With a gate charge (Qg) of 14nC maximum at 5V, it offers fast switching characteristics. The device is housed in an 8-SOIC package for surface mounting, with a maximum power dissipation of 2.5W at 25°C ambient. Suitable for use in automotive, industrial, and consumer electronics power management systems. Operating temperature range is -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 10A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1010 pF @ 15 V |
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