IRF7822PBF
MOSFET N-CH 30V 18A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7822PBF is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 18A at 25°C, with a maximum power dissipation of 3.1W. The low on-resistance of 6.5mOhm at 15A and 4.5V gate drive voltage, coupled with a maximum gate charge of 60 nC at 5V, ensures efficient switching performance. The IRF7822PBF utilizes advanced MOSFET technology for optimal thermal management and reliability. It is supplied in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, suitable for high-density board designs. This component is commonly employed in power management, automotive, and industrial control systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 15A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 16 V |
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