IRF7821TRPBFXTMA1
TRENCH <= 40VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF7821TRPBFXTMA1 is an N-Channel Power MOSFET designed for demanding applications. This surface mount component offers a 30 V (Vdss) drain-source voltage and a continuous drain current (Id) of 13.6 A at 25°C with a maximum power dissipation of 2.5 W. Featuring a low on-resistance of 9.1 mOhm at 13 A and 10 V (Vgs), it utilizes TRENCH technology for enhanced performance. The device operates with a 4.5 V to 10 V gate drive voltage, a gate charge (Qg) of 14 nC at 4.5 V, and an input capacitance (Ciss) of 1010 pF at 15 V. The IRF7821TRPBFXTMA1 is housed in a PG-DSO-8-902 package and is supplied on a Digi-Reel®. This MOSFET is suitable for use in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PG-DSO-8-902 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1010 pF @ 15 V |
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