IRF7821TRPBF-1
MOSFET N-CH 30V 13.6A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF7821TRPBF-1 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 13.6A at 25°C. The low on-resistance (Rds On) of 9.1mOhm at 13A and 10V gate-source voltage ensures minimal power loss during conduction. With a gate charge (Qg) of 14nC at 4.5V and input capacitance (Ciss) of 1010pF at 15V, it is optimized for fast switching speeds. The device is supplied in an 8-SOIC package for surface mounting and offers a maximum power dissipation of 2.5W. It operates across a wide industrial temperature range from -55°C to 155°C. This MOSFET is suitable for use in power management, automotive, and industrial control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1010 pF @ 15 V |
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