IRF7821TRPBF
MOSFET N-CH 30V 13.6A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7821TRPBF is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 13.6A at 25°C, with a maximum power dissipation of 2.5W (Ta). The low on-resistance, specified at 9.1mOhm maximum for 13A and 10V Vgs, is achieved with a 4.5V gate drive. Key electrical parameters include a gate charge (Qg) of 14 nC maximum at 4.5V Vgs and an input capacitance (Ciss) of 1010 pF maximum at 15V Vds. The IRF7821TRPBF utilizes advanced MOSFET technology and is housed in an 8-SOIC package, suitable for surface mounting. It operates across a temperature range of -55°C to 155°C (TJ). This component is commonly found in power management circuits within the automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1010 pF @ 15 V |
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