IRF7821GTRPBF
MOSFET N-CH 30V 13.6A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7821GTRPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30 V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 13.6 A at 25°C, with a maximum power dissipation of 2.5 W. The Rds(On) is specified at a low 9.1 mOhm at 13 A and 10 V gate drive.
The IRF7821GTRPBF utilizes a 4.5 V, 10 V gate drive range, with a maximum gate charge (Qg) of 14 nC at 4.5 V and a maximum input capacitance (Ciss) of 1010 pF at 15 V. The device supports a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 1V at 250µA. Packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, this MOSFET is supplied on a Tape & Reel (TR). Its operating temperature range is -55°C to 155°C. This component is utilized across various industries including automotive and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1010 pF @ 15 V |
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