IRF7815PBF
MOSFET N-CH 150V 5.1A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7815PBF, offers a 150V drain-source breakdown voltage and a continuous drain current of 5.1A at 25°C ambient. This device features a low on-resistance of 43mOhm maximum at 3.1A and 10V Vgs, with a typical gate charge of 38 nC at 10V. The input capacitance (Ciss) is specified at 1647 pF maximum at 75V. Designed for surface mounting in an 8-SOIC package, it dissipates a maximum of 2.5W at 25°C ambient. The operating temperature range is -55°C to 150°C. This component is utilized in industrial power supplies and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 3.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1647 pF @ 75 V |
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